Year 1997 - Issue 2-4 - February-April
Characterization of microdefects in GaAs crystals with high-resolution X-ray diffractometry.
Authors: E. Zieliska-Rohoziska, T. Slupiski, J. Gronkowski, T. Harasimowicz, J. Borowski
DOI:
pp. 625-636
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Contributions of multipole terms to the photoelectric yield in X-ray standing-wave measurements.
Authors: I. A. Vartanyants, J. Zegenhagen
DOI:
pp. 617-624
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XRPD application for laser-treated surface of Fe-based alloys study.
Authors: A. V. Nedolya
DOI:
pp. 609-616
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Anomalous X-ray scattering from bulk microdefects.
Authors: D. Mogilyansky, E. Gartstein
DOI:
pp. 599-608
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Integrated X-ray substructure analysis of plastically deformed beryllium single crystals.
Authors: C. May, P. Klimanek
DOI:
pp. 591-598
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Influence of free electrons and point defects on the lattice parameters and thermal expansion of gallium nitride.
Authors: M. Leszczynski, H. Teisseyre, T. Suski, I. Grzegory, M. Bockowski, J. Jun, S. Porowski, J. Bak-Misiuk, J. Domagala
DOI:
pp. 585-590
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Comparison between different X-ray diffraction methods to extract strains in metallic multilayers
Authors: S. Labat, O. Thomas, L. Barrallier, B. Gilles, A. Marty, G. Patrat
DOI:
pp. 577-584
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Phase-contrast hard X-ray microtomography by Bragg-Fresnel optics.
Authors: Y. Hartman, V. Kohn, S. Kuznetsov, A. Snigirev, I. Snigireva
DOI:
pp. 571-576
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X-ray diffraction study of porous silicon layers etched on (111)-oriented p+ substrate.
Authors: G. Kowalski, J. Gronkowski, T. Harasimowicz, M. Moore, Z. Maricic, E. Nossar-zewska-Orlowska, A. Brzozowski
DOI:
pp. 561-570
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Imaging of biological objects in the plane-wave diffraction scheme.
Authors: V. N. Ingal, E. A. Beliaevskaya
DOI:
pp. 553-560
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Regimes of X-ray phase-contrast imaging with perfect crystals.
Authors: T. E. Gureyev, S. W. Wilkins
DOI:
pp. 545-552
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X-ray diffraction study on the correlation between ordered domains size and ordering degree in InGaP/GaAs alloy layers.
Authors: L. Francesio, L. Alagna, B. Capelle, C. Ferrari, P. Franzosi, M. Sauvage
DOI:
pp. 537-544
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X-ray dynamical diffraction on superlattice with unequal layer thicknesses.
Authors: A. A. Dyshekov, Yu. P. Khapachev, D. A. Tarasov
DOI:
pp. 531-536
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Improved dynamical theory for X-ray reflectivity of ideal crystals of finite size at low and high incidence angles.
Authors: L. De Caro, L. Tapfer
DOI:
pp. 521-530
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Wave-optical description of X-ray phase contrast images of weakly absorbing non-crystalline objects.
Authors: V. A. Bushuev, E. A. Beliaevskaya, V. N. Ingal
DOI:
pp. 513-520
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Photoelectrons in X-ray standing-wave technique: potentialities in crystal subsurface layer investigation.
Authors: E. Kh. Mukhamedzhanov
DOI:
pp. 501-512
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A high-precision spectrometer for the absolute determination of X-ray absorption edges as calibration standards.
Authors: J. Stumpel, P. Becker
DOI:
pp. 489-501
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Monolithic devices for high-resolution X-ray diffractometry and topography
Authors: D. Korytar, P. Bohaek, I. Bee, L. Francesio, P. Mikul
DOI:
pp. 481-488
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Glancing-incidence X-ray characterization of Nb/Pd multilayers.
Authors: M. A. Tagliente, A. Del Vecchio, L. Tapfer, C. Coccorese, L. Mercaldo, L. Maritato, J. M. Slaughter, C. M. Falco
DOI:
pp. 473-480
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Triple-axis diffractometry on GaN/Al2O3(001) and AIN/Al2O3(001) using a parabolically curved graded multilayer as analyzer.
Authors: R. Stummer, T. Metzger, M. Schuster, H. Gubel
DOI:
pp. 465-472
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Grazing-incidence diffraction on LiNbO3 under surface acoustic wave excitation.
Authors: W. Sauer, T. H. Metzger, J. Peisl, Y. Avrahami, E. Zolotoyabko
DOI:
pp. 455-464
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High-resolution X-ray scattering from CdMnTe/CdTe multiple quantum well structures.
Authors: C. R. Li, B. K. Tanner, P. Muck, J. H. C. Hogg, B. Lunn, D. E. Ashenford
DOI:
pp. 447-454
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Interface study of W/Si multilayers with increasing number of periods.
Authors: M. Jergel, E. Majkova, V. Holy Luby, R. Senderak
DOI:
pp. 439-446
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Investigation of the interface roughness of GaAs single quantum wells by X-ray diffractometry, reflectivity and diffuse scattering.
Authors: B. Jenichen, R. Hey, M. Wassermeier, K. Ploog
DOI:
pp. 429-438
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X-ray reflectivity reciprocal space mapping of strained SiGe/Si superlattices.
Authors: V. Holy, A. A. Darhuber, J. Stangl, G. Bauer, J. F. Nutzel, G. Abstreiter
DOI:
pp. 419-428
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X-ray specular reflectivity and grazing incidence X-ray diffraction of new Langmuir-Blodgett multilayers
Authors: C. Giannini, L. Tapfer, M. Sauvage-Simkin, Y. Garreau, N. Jedrecy, M. B. Veron, R. Pinchaux, M. Burghard and S. Roth
DOI:
pp. 411-418
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Ge layer in Si(100) characterized by X-ray reflectivity, grazing incidence diffraction and standing-wave measurements.
Authors: U. Beck, P. Yang, T. H. Metzger, J. Peisl, J. Falta, G. Materlik, T. Rupp, H. Baumgartner, I. Eisele, J. R. Patel
DOI:
pp. 403-410
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X-ray scattering from thin organic films and multilayers.
Authors: U. Pietsch, T. A. Barberka, Th. Geue, R. Stummer
DOI:
pp. 393-402
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High-resolution X-ray diffraction from imperfect heterostructures.
Authors: E. Zolotoyabko, D. Parnis
DOI:
pp. 385-392
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Lateral periodicity in highly-strained (GaIn)As/Ga(PAs) superlattices investigated by X-ray scattering techniques.
Authors: Y. Zhuang, C. Giannini, L. Tapfer, T. Marschner, W. Stolz
DOI:
pp. 377-384
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High-resolution X-ray diffraction investigation of crystal perfection and relaxation of GaAs/InGaAs/GaAs quantum wells depending on MOVPE growth conditions.
Authors: U. Zeimer, F. Bugge, S. Gramlich, I. Urban, A. Oster, M. Weyers
DOI:
pp. 369-376
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Characterization of SiGe HBT-structures by double- and triple-crystal diffractometry.
Authors: P. Zaumseil
DOI:
pp. 361-368
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Reciprocal space mapping on Si1-xCx epilayers and Sin/C/Sin superlattices.
Authors: J. Stangl, S. Zerlauth, V. Holy, W. Faschinger, G. Bauer
DOI:
pp. 355-360
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Pendellösung fringes of silicon at low temperatures.
Authors: Y. Soejima, T. Eto, H. Naruoka, Z. Lu, A. Okazaki
DOI:
pp. 347-354
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Determination of the deformation state of HgSe/ZnTe layers.
Authors: P. Schaefer, H. Berger, D. Schikora
DOI:
pp. 339-346
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High-resolution X-ray diffraction characterisation of piezoelectric InGaAs/GaAs multiquantum wells and superlattices on (111)B GaAs.
Authors: A. Sanz-Hervas, M. Lopez, A. Sacedon, J. L. Sanchez-Rojas, M. Aguilar, C. Llorente, R. Lorenzo, E. J. Abril, E. Calleja, E. Munoz
DOI:
pp. 329-338
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New methods for depth profiling of heterostructures by X-ray diffraction.
Authors: M. O. Moeller, T. Gerhard, H. R. Reszlig;, G. Landwehr
DOI:
pp. 321-328
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X-ray investigation of strain-compensated GaAs:C/AlAs:C distributed Bragg reflectors.
Authors: A. Mazuelas, R. Hey, B. Jenichen, H. T. Grahn
DOI:
pp. 313-320
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High-resolution X-ray diffraction of silicon at low temperatures.
Authors: Z. Lu, K. Munakata, A. Kohno, Y. Soejima, A. Okazaki
DOI:
pp. 305-312
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Modelling imperfections of epitaxial heterostructures by means of X-ray diffraction analysis.
Authors: Q. Liu, W. Prost, A. Brennemann, U. Auer, F. J. Tegude
DOI:
pp. 299-304
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Effect of uniaxial stress on the lattice spacing of silicon at low temperatures.
Authors: A. Kohno, Z. Lu, Y. Soejima, A. Okazaki
DOI:
pp. 293-298
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X-ray diffraction peak profiles from heteroepitaxial structures with misfit dislocations.
Authors: V. M. Kaganer, R. Opitz, M. Schmidbauer, R. Koehler, B. Jenichen
DOI:
pp. 285-292
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High-resolution X-ray diffraction study of highly mismatched III-V heterostructures by analysis of the layer Bragg peak width.
Authors: C. Ferrari, L. Francesio, P. Franzosi, S. Gennari
DOI:
pp. 277-284
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Application of X-ray diffraction in Laue geometry to imperfect near-surface layers.
Authors: R. N. Kyutt, T. S. Argunova
DOI:
pp. 267-276
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Reciprocal space mapping for semiconductor substrates and device heterostructures.
Authors: Mark S. Goorsky, K. M. Matney, M. Meshkinpour, D. C. Streit, T. R. Block
DOI:
pp. 257-266
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Treatment of the heat-load-associated contrast in synchrotron radiation topography.
Authors: F. Zontone, L. Mancini
DOI:
pp. 247-256
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Reduction of misfit dislocation density in strained InxGa1-xAs heterostructure via growth on patterned GaAs (001) substrate.
Authors: W. Zeng, S. S. Jiang, X. R. Huang, C. Ferrari, S. Gennari, G. Salviati
DOI:
pp. 241-246
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Interference effects in Bragg-case synchrotron section topography of elastically bent silicon implanted crystals.
Authors: K. Wieteska, W. Wierzchowski, W. Graeff
DOI:
pp. 233-240
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The images of misfit dislocations in Bragg-case synchrotron section topography.
Authors: W. Wierzchowski, K. Wieteska, W. Graeff
DOI:
pp. 227-232
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X-ray topography of complicated cross-section sapphire shaped crystals.
Authors: I. L. Shulpina, P. I. Antonov, S. I. Bakholdin and V. M. Krymov
DOI:
pp. 219-226
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X-ray study of GaAs/Ge heterostructures: relationship between interfacial defects and growth process.
Authors: M. Putero, N. Burle, C. Pelosi, C. Frigeri, E. Chimenti, N. Guelton
DOI:
pp. 213-218
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Triple-axis X-ray diffraction study of polishing damage in III-V semiconductors.
Authors: C. D. Moore, I. Pape, B. K. Tanner
DOI:
pp. 205-212
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Enhanced possibilities of section topography at a third-generation synchrotron radiation facility.
Authors: C. Medrano, P. Rejmankova, M. Ohler, I. Matsouli
DOI:
pp. 195-204
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X-ray topographic investigation of tungstate flux-grown KTiOAsO4 crystals.
Authors: W. J. Liu, S. S. Jiang, X. B. Hu, X. R. Huang, J. Y. Wang, J. H. Jiang, C. Ferrari and S. Gennari
DOI:
pp. 185-194
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Synchrotron X-ray topographic study of strain in silicon wafers with integrated circuits.
Authors: M. Karilahti, T. Tuomi, M. Taskinen, J. Tulkki, H. Lipsanen, P. McNally
DOI:
pp. 181-184
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X-ray topographic study of twins in NdxY(1-x)Al3(BO3)4 crystal.
Authors: X. B. Hu, S. S. Jiang, X. R. Huang, W. J. Liu, C. Z. Ge, J. Y. Wang, H. F. Pan, C. Ferrari, S. Gennari
DOI:
pp. 175-180
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Study of residual strains in wafer crystals by means of lattice tilt mapping.
Authors: C. Ferrari, D. Korytar, J. Kumar
DOI:
pp. 165-174
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Quantitative analysis of screw dislocations in 6H-SiC single crystals.
Authors: M. Dudley, W. Si, S. Wang, C. Carter jr., R. Glass, V. Tsvetkov
DOI:
pp. 153-164
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High-resolution imaging of electronic devices using line modified-asymmetric crystal topography (LM-ACT).
Authors: R. W. Armstrong, W. T. Beard, K. A. Green, X. J. Zhang
DOI:
pp. 147-152
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Kinetic properties of dislocations in semiconductors revealed by X-ray topography.
Authors: K. Sumino
DOI:
pp. 137-146
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X-ray topographic studies of organic and non-linear optical materials.
Authors: P. J. Halfpenny, J. N. Sherwood, G. S. Simpson
DOI:
pp. 123-136
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